Metal Semiconductor Contacts Rhoderick Pdf Download
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The ReSe2-Si contacts show different rectification behaviors, and the rectification contact between ReSe2 and Au has much larger ratio of forward bias current to reverse bias current than the ReSe2-Si contact. This indicates that the ReSe2/Au contact behaves much better than the ReSe2-Si contact. The rectification contact between ReSe2 and Au is because the ReSe2-Au contact has a high Schottky barrier [29]. The Schottky barrier height hB=0.18 eV is the largest in ReSe2. The conduction band of ReSe2 is between the Fermi level and ReSe2 energy bandgap Eg=1.45 eV, and the valence band is between the Fermi level and the conduction band. The n-type ReSe2 and Au have similar work function which leads to a large Schottky barrier [29] hB=0.18 eV, which increases the forward bias current. The large Schottky barrier height is caused by a deep energy bandgap Eg. The work function of the n-type ReSe2 is 4.42 eV. N-type ReSe2 is p-type ReSe2 in which a shallow energy bandgap is formed between the Fermi level and the valence band. The energy bandgap in ReSe2 is 1.45 eV. The metal Au has a high electron work function of 4.40 eV [30]. The high Schottky barrier height hB=0.18 eV of ReSe2 and Au is the main reason for the nonideal contact and the large rectification ratio of the ReSe2-Au contact. In the ReSe2-Si contact, Schottky barrier height hB is small because of the small difference of work function between ReSe2 and Si. The Schottky barrier height hB=0.17 eV is the smallest in the ReSe2-Si contact. The large Schottky barrier height in ReSe2-Si contact has little influence on the rectification behavior because of the small difference of electron work function. The energy band of ReSe2 is between the Fermi level and the conduction band. The valence band of Si is above the Fermi level. The Schottky barrier height hB=0.17 eV is the smallest in the ReSe2-Si contact.
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